Numerical Analysis of the Performance of p-i-n Diode Microwave Switches Based on Different Semiconductor Materials
نویسندگان
چکیده
A numerical analysis of the parameters of p-i-n diode microwave switches based on different semiconductor materials is presented. The Si, GaAs, 3C-SiC, 4H-SiC, 6H-SiC and GaN have been analyzed. The p-i-n diode parameters such as: series resistance, insertion loss and isolation have been studied. It is revealed that p-i-n diodes on the base of GaN permit to achieve the lowest value of junction capacitance, and p-i-n diode on the base of GaAs is characterized by the best value of series resistant. Thus p-i-n diodes prepared on the base of these materials could show the better results in isolation and insertion loss, respectively.
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